LIGHT EMITTING DEVICELead freeRoHS Standard

●Light Emitting Device
The characteristics of a light emitting device vary greatly depending on the packaging method and type of LED used. It is necessary to select a light emitting device that is suitable for the application, taking into account characteristics such as directionality, environmental resistance, and luminous intensity. HL222 is a light emitting device with high parallel light characteristics, developed using proprietary optical design and lens technology. Hermetic type light emitting devices (e.g. EL-1KL3) are designed to be highly reliable even under harsh outdoor conditions. This type of device uses a glass lens for the light-emitting window, allowing for sharp, highly directional high-output light emission. EL23G is a thin, upright resin type light emitting device that is particularly suitable for use with interrupters and other components that require light to be received from the opposite direction. All of these types of devices have characteristics determined by their shape, as well as characteristics such as emission wavelength, including visible and near-infrared light, and a variety of light emitting devices with different properties are available.

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Power Dissipation PD

mW　　～

mW

 Forward Voltage VF(Max.)

V　～

V
Forward Voltage IF

mA　～

mA

 Emission Output Po(Typ.)

mW　　～

mW
Emission Output Po(Typ.)

mW/sr　　～

mW/sr

 Emission Output IF

mA　　～

mA
Peak emission Wavelength
λP(Typ.)

nm　～

nm

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Part No. DATA SHEET Feature Production Status
〇： In mass production
△： Need inquiry 		Power Dissipation Operating Temperature Forward Voltage Emission Output Peak emission Wavelength Half Angle
PD(mW) Topr.(℃) IF(mA) VF(V) IF(mA) Po(mW) Po(mW/sr) λP(nm) Δθ(°)
Typ. Typ. Typ. Typ. Min.

BL15-1101H 		pdfはこちら product_featurePin-point red light emitting diode（AlGaInP） production_status〇 power_dissipation120 mW topr_min-30 ～ +topr_max85 ℃ forward_voltage_if20 mA forward_voltage2.8 V po_if20 mA po_mw0.8 mW po_mw_sr- peak_wavelength650 nm ±half_value_angle60 °

BL15-1212H 		pdfはこちら product_featurePin-point red light emitting diode（AlGaInP） production_status〇 power_dissipation120 mW topr_min-30 ～ +topr_max85 ℃ forward_voltage_if20 mA forward_voltage2.8 V po_if20 mA po_mw1 mW po_mw_sr- peak_wavelength650 nm ±half_value_angle18 °

BL6F 		pdfはこちら product_feature- production_status〇 power_dissipation150 mW topr_min-20 ～ +topr_max80 ℃ forward_voltage_if20 mA forward_voltage1.4 V po_if- po_mw- po_mw_sr- peak_wavelength660 nm ±half_value_angle36 °

CL-1KL3 		pdfはこちら product_featureInfrared emitting diode（GaALAs） production_status〇 power_dissipation170 mW topr_min-30 ～ +topr_max100 ℃ forward_voltage_if100 mA forward_voltage1.7 V po_if100 mA po_mw7.5 mW po_mw_sr- peak_wavelength880 nm ±half_value_angle17 °

CL-1KL7 		pdfはこちら product_featureInfrared emitting diode（GaALAs） production_status〇 power_dissipation200 mW topr_min-30 ～ +topr_max100 ℃ forward_voltage_if100 mA forward_voltage2 V po_if100 mA po_mw8 mW po_mw_sr- peak_wavelength880 nm ±half_value_angle8 °

CL-203 		pdfはこちら product_featureInfrared emitting diode（GaALAs） production_status〇 power_dissipation160 mW topr_min-40 ～ +topr_max100 ℃ forward_voltage_if80 mA forward_voltage2 V po_if50 mA po_mw5 mW po_mw_sr- peak_wavelength880 nm ±half_value_angle9 °

CL-205HL 		pdfはこちら product_feature- production_status〇 power_dissipation160 mW topr_min-30 ～ +topr_max100 ℃ forward_voltage_if50 mA forward_voltage1.5 V po_if50 mA po_mw12 mW po_mw_sr- peak_wavelength870 nm ±half_value_angle9 °

CL-207 		pdfはこちら product_featureInfrared emitting diode（GaALAs） production_status〇 power_dissipation170 mW topr_min-30 ～ +topr_max100 ℃ forward_voltage_if20 mA forward_voltage1.6 V po_if20 mA po_mw2 mW po_mw_sr- peak_wavelength880 nm ±half_value_angle35 °

EL-1K3 		pdfはこちら product_featureInfrared emitting diode（GaAs） production_status〇 power_dissipation170 mW topr_min-40 ～ +topr_max100 ℃ forward_voltage_if100 mA forward_voltage1.7 V po_if100 mA po_mw4 mW po_mw_sr- peak_wavelength940 nm ±half_value_angle36 °

EL-1KL3 		pdfはこちら product_featureInfrared emitting diode（GaAs） production_status〇 power_dissipation170 mW topr_min-30 ～ +topr_max100 ℃ forward_voltage_if100 mA forward_voltage1.7 V po_if100 mA po_mw7 mW po_mw_sr- peak_wavelength940 nm ±half_value_angle15 °

EL-1KL5 		pdfはこちら product_featureInfrared emitting diode（GaAs） production_status〇 power_dissipation170 mW topr_min-40 ～ +topr_max100 ℃ forward_voltage_if100 mA forward_voltage1.7 V po_if100 mA po_mw5 mW po_mw_sr- peak_wavelength940 nm ±half_value_angle5 °

EL-1ML2 		pdfはこちら product_feature- production_status〇 power_dissipation170 mW topr_min-25 ～ +topr_max100 ℃ forward_voltage_if50 mA forward_voltage1.2 V po_if50 mA po_mw6.5 mW po_mw_sr- peak_wavelength940 nm ±half_value_angle32 °

EL23G 		pdfはこちら product_featureInfrared emitting diode（GaAs） production_status〇 power_dissipation100 mW topr_min-20 ～ +topr_max100 ℃ forward_voltage_if60 mA forward_voltage1.6 V po_if50 mA po_mw- po_mw_sr- peak_wavelength940 nm ±half_value_angle30 °

EL305 		pdfはこちら product_feature- production_status〇 power_dissipation75 mW topr_min-2 ～ +topr_max80 ℃ forward_voltage_if20 mA forward_voltage1.2 V po_if- po_mw- po_mw_sr- peak_wavelength940 nm ±half_value_angle20 °

EL333 		pdfはこちら product_featureInfrared emitting diode（GaAs） production_status〇 power_dissipation75 mW topr_min-25 ～ +topr_max85 ℃ forward_voltage_if50 mA forward_voltage1.5 V po_if20 mA po_mw- po_mw_sr- peak_wavelength940 nm ±half_value_angle20 °

EL341M 		pdfはこちら product_featureInfrared emitting diode（GaAs） production_status〇 power_dissipation75 mW topr_min-25 ～ +topr_max80 ℃ forward_voltage_if20 mA forward_voltage1.5 V po_if50 mA po_mw- po_mw_sr25 mW/sr peak_wavelength940 nm ±half_value_angle14 °

CL-205 		pdfはこちら product_featureInfrared emitting diode（GaALAs） production_status〇 power_dissipation160 mW topr_min-30 ～ +topr_max100 ℃ forward_voltage_if50 mA forward_voltage2 V po_if50 mA po_mw10 mW po_mw_sr- peak_wavelength870 nm ±half_value_angle7 °

EL342 		pdfはこちら product_featureInfrared emitting diode（GaAs） production_status〇 power_dissipation75 mW topr_min- ～ +topr_max60 ℃ forward_voltage_if20 mA forward_voltage1.5 V po_if50 mA po_mw14 mW po_mw_sr- peak_wavelength940 nm ±half_value_angle35 °

EL615 		pdfはこちら product_featureInfrared emitting diode（GaAs） production_status〇 power_dissipation60 mW topr_min-20 ～ +topr_max70 ℃ forward_voltage_if20 mA forward_voltage1.6 V po_if20 mA po_mw1.9 mW po_mw_sr- peak_wavelength940 nm ±half_value_angle20 °

EL615H 		pdfはこちら product_feature- production_status〇 power_dissipation150 mW topr_min-20 ～ +topr_max70 ℃ forward_voltage_if20 mA forward_voltage1.4 V po_if20 mA po_mw7 mW po_mw_sr15 mW/sr peak_wavelength940 nm ±half_value_angle20 °

EL6F11 		pdfはこちら product_feature- production_status〇 power_dissipation80 mW topr_min-25 ～ +topr_max80 ℃ forward_voltage_if50 mA forward_voltage1.3 V po_if- po_mw- po_mw_sr- peak_wavelength940 nm ±half_value_angle25 °

HL15-1211 		pdfはこちら product_feature- production_status〇 power_dissipation200 mW topr_min-20 ～ +topr_max80 ℃ forward_voltage_if50 mA forward_voltage1.8 V po_if- po_mw- po_mw_sr- peak_wavelength855 nm ±half_value_angle17 °

HL221
（平行光LED） 		pdfはこちら product_featureParallel light LED production_status〇 power_dissipation150 mW topr_min-30 ～ +topr_max100 ℃ forward_voltage_if50 mA forward_voltage1.5 V po_if50 mA po_mw8.4 mW po_mw_sr- peak_wavelength850 nm ±half_value_angle-

HL222
（平行光LED） 		pdfはこちら product_featureParallel light LED production_status〇 power_dissipation140 mW topr_min-30 ～ +topr_max100 ℃ forward_voltage_if20 mA forward_voltage1.6 V po_if20 mA po_mw4.4 mW po_mw_sr- peak_wavelength850 nm ±half_value_angle-

HL226
（平行光LED） 		pdfはこちら product_featureParallel light LED production_status〇 power_dissipation160 mW topr_min-30 ～ +topr_max85 ℃ forward_voltage_if20 mA forward_voltage1.45 V po_if20 mA po_mw3.7 mW po_mw_sr- peak_wavelength850 nm ±half_value_angle-

HL-331 		pdfはこちら product_feature- production_status〇 power_dissipation160 mW topr_min-30 ～ +topr_max85 ℃ forward_voltage_if50 mA forward_voltage1.5 V po_if20 mA po_mw8 mW po_mw_sr16.8 mW/sr peak_wavelength850 nm ±half_value_angle20 °

HL601 		pdfはこちら product_featureInfrared emitting diode（GaALAs） production_status〇 power_dissipation85 mW topr_min-20 ～ +topr_max70 ℃ forward_voltage_if20 mA forward_voltage1.7 V po_if20 mA po_mw1.5 mW po_mw_sr- peak_wavelength850 nm ±half_value_angle75 °

HL615 		pdfはこちら product_featureInfrared emitting diode（GaALAs） production_status〇 power_dissipation70 mW topr_min-20 ～ +topr_max70 ℃ forward_voltage_if20 mA forward_voltage1.6 V po_if20 mA po_mw2.6 mW po_mw_sr- peak_wavelength850 nm ±half_value_angle20 °

HL615H 		pdfはこちら product_featureInfrared emitting diode（GaALAs） production_status〇 power_dissipation100 mW topr_min-25 ～ +topr_max70 ℃ forward_voltage_if20 mA forward_voltage1.4 V po_if20 mA po_mw6.5 mW po_mw_sr- peak_wavelength850 nm ±half_value_angle20 °

HL6F 		pdfはこちら product_feature- production_status〇 power_dissipation150 mW topr_min-20 ～ +topr_max80 ℃ forward_voltage_if20 mA forward_voltage1.4 V po_if20 mA po_mw11 mW po_mw_sr- peak_wavelength850 nm ±half_value_angle20 °

ML341H 		pdfはこちら product_featureInfrared emitting diode（GaALAs） production_status〇 power_dissipation150 mW topr_min-30 ～ +topr_max100 ℃ forward_voltage_if20 mA forward_voltage1.6 V po_if20 mA po_mw3.2 mW po_mw_sr- peak_wavelength870 nm ±half_value_angle14 °