1980

• Acquired third plant land (1,868m2) in March
• Incorporated as Korea KODENSHI Co., Ltd.
• Relase of silicon single crystal solar cell wafer with electro less nickel plated electrode formation

1981

• Release of silicon single crystal solar cell for calculators produced by solar cell silk screen method
• Development of diffusion wafer type phototransistor
• Production of photodiodes for remote control

1982

• The building of third factory completed in November
• Capital increased to 72 million yen in December
• Transferred solar cell wafer process to Korea KODENSHI Corporation (KKC)
• Development of optical encoder
• Development of 0.55 mm thick solar cell module

1983

• In-house production of transfer mold (resin molding) products
• Development of hybrid IC
• Development of planar type photo Darlington transistor device
• Development of diffusion wafer type phototransistor
• Development of BN diffusion process

1984

• Capital increased to 138 million yen in April
• Capital increased to 156 million yen in August
• Capital increased to 569 million yen in October
• 4 inch silicon wafer process, compound wafer process line installed in the third factory
• Release of gallium・aluminum・arsenic (GaAlAs) infrared light-emitting diode
• Release of high-speed・high-power light-emitting diode for optical communication
• Started OEM production of bipolar ICs
• Started OEM production of solar cell battery charger

1985

• Capital increased to 870 million yen in January
• Development of optical remote control receiver unit (shield remote control)
• Development of photo IC sensor
• Development of 16-split photo diode for CD
• Introduced CVD equipment to anti-reflection film process by SiN film

1986

• Release of photo IC sensor (PICS)
• Development of encoder for HDD

1987

• Release of paper sensor
• Establishment implant-less high resistance process
• Development of position sensor

1988

• Development of negative resistance transistor BAMBIT

1989

• Capital increased to 888.75 million yen in April
• Release of parallel-light LED
• Development of thermal print head
• Development of logic phototransistor
• Establishment of photo IC process